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МТД4-3-100-9 SCR-module DATASHEET

МТД4-3-100-9 ELECTRICAL SPECIFICATIONS

 

Type: SCR-module

Maximum repetitive peak and off-state voltage (VDRM): 900 V

Maximum average on-state current (IT(AVR)): 100 A

Maximum RMS on-state current (IT(RMS)): 157 A

Non repetitive surge peak on-state current (ITSM): 2000 A

Critical repetitive rate of rise of on-state current (dI/dt): 125 A/µs

Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs

Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C

Junction to case thermal resistance (RTH(j-c)): 0.3 K/W

Triggering gate voltage (VGT): 3 V

Peak on-state voltage drop (VTM): 1.55 V

Triggering gate current (IGT): 150 mA

Holding current (IH): 120 mA

 

МТД4-3-100-9 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

 

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МТД4-3-100-9 Datasheet

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МТД4-3-100-9
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