All Transistors. SCR. МТТ10-3-200-14 Datasheet

 

МТТ10-3-200-14 SCR-module DATASHEET

МТТ10-3-200-14 ELECTRICAL SPECIFICATIONS

 

Type: SCR-module

Maximum repetitive peak and off-state voltage (VDRM): 1400 V

Maximum average on-state current (IT(AVR)): 200 A

Maximum RMS on-state current (IT(RMS)): 314 A

Non repetitive surge peak on-state current (ITSM): 5500 A

Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs

Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs

Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C

Junction to ambient thermal resistance (RTH(j-a)): 0.77 K/W

Junction to case thermal resistance (RTH(j-c)): 0.12 K/W

Triggering gate voltage (VGT): 3 V

Peak on-state voltage drop (VTM): 1.55 V

Triggering gate current (IGT): 250 mA

Holding current (IH): 300 mA

 

МТТ10-3-200-14 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

 

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МТТ10-3-200-14 Datasheet

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МТТ10-3-200-14
 datasheet

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Description

Модули тиристорные и комбинированные Модули тиристорные и комбинированные МОДУЛИ ТИРИСТОРНЫЕ И КОМБИНИРОВАННЫЕ МTT10/3-200, МДT10/3-200, МTД10/3-200, МТТ10/4-200, МТТ10/5-200, МTT10/3-250, МДT10/3-250, МTД10/3-250, МТТ10/4-250, МТТ10/5-250, МTT10/3-320, МДT10/3-320, МTД10/3-320, МТТ10/4-320, МТТ10/5-320 Модули тиристорные и ком

 
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