МТТ12-4-800-6 SCR-module DATASHEET

МТТ12-4-800-6 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1800 V
   Maximum average on-state current (I_T(AVR)): 630 A
   Maximum RMS on-state current (I_T(RMS)): 990 A
   Non repetitive surge peak on-state current (I_TSM): 22000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 0.44 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.05 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.45 V
   Triggering gate current (I_GT): 250 mA
   Holding current (I_H): 300 mA

 

МТТ12-4-800-6 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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МТТ12-4-800-6 Datasheet

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Description

Модули тиристорные и комбинированные Модули тиристорные и комбинированные МОДУЛИ ТИРИСТОРНЫЕ И КОМБИНИРОВАННЫЕ МTT12/3-500, МДT12/3-500, МTД12/3-500, МТТ12/4-500, МТТ12/5-500, МTT12/3-630, МДT12/3-630, МTД12/3-630, МТТ12/4-630, МТТ12/5-630, МTT12/3-800, МДT12/3-800, МTД12/3-800, МТТ12/4-800, МТТ12/5-800 Модули тиристорные и ком