All Transistors. SCR. МТТ9-3-250-6 Datasheet

 

МТТ9-3-250-6 SCR DATASHEET

МТТ9-3-250-6 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1200 V
   Maximum average on-state current (IT(AVR)): 10 A
   Maximum RMS on-state current (IT(RMS)): 15 A
   Non repetitive surge peak on-state current (ITSM): 160 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -50..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 7.6 K/W
   Junction to case thermal resistance (RTH(j-c)): 1.8 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 1.85 V
   Triggering gate current (IGT): 40 mA
   Holding current (IH): 70 mA

 

МТТ9-3-250-6 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

МТТ9-3-250-6 Datasheet

Page #1

МТТ9-3-250-6
 datasheet

Page #2

МТТ9-3-250-6
 datasheet #2

Description

Ìîäóëè òèðèñòîðíûå è êîìáèíèðîâàííûå ÌÎÄÓËÈ ÒÈÐÈÑÒÎÐÍÛÅ È ÊÎÌÁÈÍÈÐÎÂÀÍÍÛÅ ÌTT9/3-200, ÌTT9/3-250 ÌTÄ9/3-200, ÌTÄ9/3-250 ÌÄÒ9/3-200, ÌÄÒ9/3-250 сняты с производства, рекомендуется заменить на МТТ10/3 Ìîäóëè òèðèñòîðíûå è êîìáèíèðîâàííûå ñîñòîÿò èç äâóõ ñèëîâûõ ïîëóïðîâîäíèêîâûõ ýëåìåíòîâ:

 
Back to Top