МТх-160-36-С1 SCR Spec

МТх-160-36-С1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 500 V
   Maximum average on-state current (I_T(AVR)): 10 A
   Maximum RMS on-state current (I_T(RMS)): 15 A
   Non repetitive surge peak on-state current (I_TSM): 160 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -50..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 7.6 K/W
   Junction to case thermal resistance (R_TH(j-c)): 1.8 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.85 V
   Triggering gate current (I_GT): 40 mA
   Holding current (I_H): 70 mA

 

МТх-160-36-С1 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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МТх-160-36-С1 Spec

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Description

PROTON-ELECTROTEX RUSSIA Double Thyristor Module Electrically isolated base plate Industrial standard package For Phase Control Simplified mechanical design, rapid assembly MTx-160-36-C1 Pressure contact Mean on-state current ITAV 160 A Repetitive peak off-state voltage VDRM 3000  3600 V Repetitive peak reverse voltage VRRM Turn-off time tq 300 s VDRM, VRRM, V 3000 3200 3400 3600 Voltage code 30 32 34 36 Tj, C – 40  125 MT3 MT4 MT5 MT/D3 MT/D4 M