МТх-200-28-С1 SCR DATASHEET
МТх-200-28-С1 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 10 A
Maximum RMS on-state current (IT(RMS)): 15 A
Non repetitive surge peak on-state current (ITSM): 160 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -50..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 7.6 K/W
Junction to case thermal resistance (RTH(j-c)): 1.8 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.85 V
Triggering gate current (IGT): 40 mA
Holding current (IH): 70 mA
МТх-200-28-С1 Datasheet
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Description
PROTON-ELECTROTEX RUSSIA Double Thyristor Module Electrically isolated base plate Industrial standard package For Phase Control Simplified mechanical design, rapid assembly MTx-200-28-C1 Pressure contact Mean on-state current ITAV 200 A Repetitive peak off-state voltage VDRM 2600 2800 V Repetitive peak reverse voltage VRRM Turn-off time tq 200 s VDRM, VRRM, V 2600 2800 Voltage code 26 28 Tj, C – 40 125 MT3 MT4 MT5 MT/D3 MT/D4 MT/D5 MD/T3 MD/T4
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