ТС112-10-9 Triac DATASHEET

ТС112-10-9 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum RMS on-state current (I_T(RMS)): 20 A
   Non repetitive surge peak on-state current (I_TSM): 120 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -60..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 4.3 K/W
   Junction to case thermal resistance (R_TH(j-c)): 1.3 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.85 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 45 mA

 

ТС112-10-9 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
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ТС112-10-9 Datasheet

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Description

○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ÒÐÈÀÊÈ ○ ○ØÒÛÐÅÂÎÉ ÊÎÍÑÒÐÓÊÖÈÈ○ ÒÐÈÀÊÈ ÒÑ112-10, ÒÑ112-16 Êîíñòðóêöèÿ òðèàêîâ L min 12 max m1, m2 - êîíòðîëüíûå òî÷êè èçìåðåíèÿ èìïóëüñíîãî í�