ТС122-20-11 Triac DATASHEET
ТС122-20-11 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 200 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 3.9 K/W
Junction to case thermal resistance (RTH(j-c)): 0.9 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 45 mA
ТС122-20-11 Datasheet
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Description
ÒÐÈÀÊÈ ÒÑ122-20, ÒÑ122-25 Êîíñòðóêöèÿ òðèàêîâ m1, m2 - êîíòðîëüíûå òî÷êè èçìåðåíèÿ èìïóëüñíîãî íàïðÿæåíèÿ â îòêðûòîì ñîñòîÿíèè; m1 - â îäíîé èç äâóõ òî÷åê; Lmin = 1,7 ìì - äëèíà ïóòè äëÿ òîêà óòå÷êè ìåæäó îñíîâíûì âûâîäîì 2 è âûâîäîì óïðàâëÿþùåãî ýëåêòðîäà Ìàññà òèðèñòîðà íå áîëåå 11 ã
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