ТС165-100-12 Triac Spec

ТС165-100-12 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 125 A
   Non repetitive surge peak on-state current (I_TSM): 1100 A
   Critical repetitive rate of rise of on-state current (dI/dt): 63 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 3.7 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.27 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 150 mA

 

ТС165-100-12 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

ТС165-100-12 Spec

Page #1

Page #2

Description

ÒÐÈÀÊÈ ÒÑ165-50, ÒÑ165-63, ÒÑ165-80, ÒÑ165-100, ÒÑ165-125 Îáùèå ñâåäåíèÿ Òðèàêè ÒÑ165 èçãîòàâëèâàþò â ïëàñòìàññîâîì êîðïóñå ñ áåñïîòåíöèàëüíûì îñíîâàíèåì ôëàíöåâîãî èñïîëíåíèÿ. Òðèàêè ïðåäíàçíà÷åíû äëÿ ðàáîòû â öåïÿõ ïîñòîÿííîãî è ïåðåìåííîãî òîêà ÷àñòîòîé äî 500 Ãö è ïðè- ìåíÿþòñÿ â �