All Transistors. SCR. ТС165-50-6 Datasheet

 

ТС165-50-6 Triac DATASHEET

ТС165-50-6 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 1000 V
   Maximum RMS on-state current (IT(RMS)): 80 A
   Non repetitive surge peak on-state current (ITSM): 660 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 3.84 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.41 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 150 mA

 

ТС165-50-6 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

ТС165-50-6 Datasheet

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ТС165-50-6
 datasheet

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ТС165-50-6
 datasheet #2

Description

ÒÐÈÀÊÈ ÒÑ165-50, ÒÑ165-63, ÒÑ165-80, ÒÑ165-100, ÒÑ165-125 Îáùèå ñâåäåíèÿ Òðèàêè ÒÑ165 èçãîòàâëèâàþò â ïëàñòìàññîâîì êîðïóñå ñ áåñïîòåíöèàëüíûì îñíîâàíèåì ôëàíöåâîãî èñïîëíåíèÿ. Òðèàêè ïðåäíàçíà÷åíû äëÿ ðàáîòû â öåïÿõ ïîñòîÿííîãî è ïåðåìåííîãî òîêà ÷àñòîòîé äî 500 Ãö è ïðè- ìåíÿþòñÿ â

 
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