All Transistors. SCR. Т106-10-1-10 Datasheet

 

Т106-10-1-10 SCR DATASHEET

Т106-10-1-10 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1000 V
   Maximum average on-state current (IT(AVR)): 16 A
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 250 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -50..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 7.6 K/W
   Junction to case thermal resistance (RTH(j-c)): 1.8 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 1.65 V
   Triggering gate current (IGT): 40 mA
   Holding current (IH): 70 mA

 

Т106-10-1-10 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т106-10-1-10 Datasheet

Page #1

Т106-10-1-10
 datasheet

Page #2

Т106-10-1-10
 datasheet #2

Description

ФГУП "Саранский завод точных приборов" 430003, Россия, Республика Мордовия, г. Саранск, ул. Рабочая, 111 т./ф.(8-8342) 24-24-90, 24-43-86 E-mail: sztp@saransk-com.ru, sztp@moris.ru КУ202Д1, КУ202Е1, КУ202Ж1, КУ202И1, КУ202К1, КУ202Л1, КУ202М1, КУ202Н1, КУ202П1, КУ202Р1, Т 106-10-1-10, ТС 106-10-1-10 Тиристоры кремниевые, планарно-диффузион

 
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