Т112-10-4 SCR DATASHEET
Т112-10-4 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 16 A
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 250 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -50..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 7.6 K/W
Junction to case thermal resistance (RTH(j-c)): 1.8 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 40 mA
Holding current (IH): 70 mA
Т112-10-4 Datasheet
Page #1
Page #2
Description
○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Ò112 ÒÈÐÈÑÒÎÐÛ Ò112-10, Ò112-16 Êîíñòðóêöèÿ òèðèñòîðîâ 1,3 L min 12 max m1, m2 - êîíòðîëüíûå òî÷êè èçìåðåíèÿ èìïóëüñíîãî íàïðÿæåíèÿ â îòêðû
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |