All Transistors. SCR. Т115-10-12 Datasheet

 

Т115-10-12 SCR DATASHEET

Т115-10-12 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 16 A
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 220 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 20.1 K/W
   Junction to case thermal resistance (RTH(j-c)): 1.9 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 45 mA
   Holding current (IH): 70 mA

 

Т115-10-12 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т115-10-12 Datasheet

Page #1

Т115-10-12
 datasheet

Page #2

Т115-10-12
 datasheet #2

Description

ÒÈÐÈÑÒÎÐÛ Ò115-6,3, Ò115-10, Ò115-16 Îáùèå ñâåäåíèÿ Òèðèñòîðû Ò115 âûïóñêàþò íà òîêè 6,3 , 10 è 16 À íàïðÿæåíèåì îò 200 äî 1200  â ïëàñòìàññîâîì êîðïóñå ñ áåñïîòåíöèàëüíûì îñíîâàíèåì ôëàíöåâîãî èñïîëíåíèÿ. Òèðèñòîðû ïðåäíàçíà÷åíû äëÿ ðàáîòû â ñèëîâûõ öåïÿõ ïîñòîÿííîãî è ïåðåìåííîãî òî

 
Back to Top