Т115-10-9 SCR DATASHEET
Т115-10-9 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1000 V
Maximum average on-state current (IT(AVR)): 6.3 A
Maximum RMS on-state current (IT(RMS)): 10 A
Non repetitive surge peak on-state current (ITSM): 100 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 21.2 K/W
Junction to case thermal resistance (RTH(j-c)): 3 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 45 mA
Holding current (IH): 70 mA
Т115-10-9 Datasheet
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Description
ÒÈÐÈÑÒÎÐÛ Ò115-6,3, Ò115-10, Ò115-16 Îáùèå ñâåäåíèÿ Òèðèñòîðû Ò115 âûïóñêàþò íà òîêè 6,3 , 10 è 16 À íàïðÿæåíèåì îò 200 äî 1200  â ïëàñòìàññîâîì êîðïóñå ñ áåñïîòåíöèàëüíûì îñíîâàíèåì ôëàíöåâîãî èñïîëíåíèÿ. Òèðèñòîðû ïðåäíàçíà÷åíû äëÿ ðàáîòû â ñèëîâûõ öåïÿõ ïîñòîÿííîãî è ïåðåìåííîãî òî
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |