All Transistors. SCR. Т115-16-9 Datasheet

 

Т115-16-9 SCR DATASHEET

Т115-16-9 ELECTRICAL SPECIFICATIONS

 

Type: SCR

Maximum repetitive peak and off-state voltage (VDRM): 900 V

Maximum average on-state current (IT(AVR)): 16 A

Maximum RMS on-state current (IT(RMS)): 25 A

Non repetitive surge peak on-state current (ITSM): 220 A

Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs

Critical rate of rise of off-state voltage (dV/dt): 500 V/µs

Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C

Junction to ambient thermal resistance (RTH(j-a)): 20.1 K/W

Junction to case thermal resistance (RTH(j-c)): 1.9 K/W

Triggering gate voltage (VGT): 2.5 V

Peak on-state voltage drop (VTM): 1.7 V

Triggering gate current (IGT): 45 mA

Holding current (IH): 70 mA

 

Т115-16-9 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

 

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Т115-16-9 Datasheet

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Т115-16-9
 datasheet

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Т115-16-9
 datasheet #2

Description

ÒÈÐÈÑÒÎÐÛ Ò115-6,3, Ò115-10, Ò115-16 Îáùèå ñâåäåíèÿ Òèðèñòîðû Ò115 âûïóñêàþò íà òîêè 6,3 , 10 è 16 À íàïðÿæåíèåì îò 200 äî 1200  â ïëàñòìàññîâîì êîðïóñå ñ áåñïîòåíöèàëüíûì îñíîâàíèåì ôëàíöåâîãî èñïîëíåíèÿ. Òèðèñòîðû ïðåäíàçíà÷åíû äëÿ ðàáîòû â ñèëîâûõ öåïÿõ ïîñòîÿííîãî è ïåðåìåííîãî òî

 
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