Т115-6,3-10 SCR DATASHEET
Т115-6,3-10 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum average on-state current (IT(AVR)): 20 A
Maximum RMS on-state current (IT(RMS)): 31 A
Non repetitive surge peak on-state current (ITSM): 300 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 3.9 K/W
Junction to case thermal resistance (RTH(j-c)): 0.55 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.75 V
Triggering gate current (IGT): 60 mA
Holding current (IH): 80 mA
Package: TO‑208AA
Т115-6,3-10 Datasheet
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Description
ÒÈÐÈÑÒÎÐÛ Ò115-6,3, Ò115-10, Ò115-16 Îáùèå ñâåäåíèÿ Òèðèñòîðû Ò115 âûïóñêàþò íà òîêè 6,3 , 10 è 16 À íàïðÿæåíèåì îò 200 äî 1200  â ïëàñòìàññîâîì êîðïóñå ñ áåñïîòåíöèàëüíûì îñíîâàíèåì ôëàíöåâîãî èñïîëíåíèÿ. Òèðèñòîðû ïðåäíàçíà÷åíû äëÿ ðàáîòû â ñèëîâûõ öåïÿõ ïîñòîÿííîãî è ïåðåìåííîãî òî
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