Т122-20-4 SCR DATASHEET

Т122-20-4 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 25 A
   Maximum RMS on-state current (I_T(RMS)): 39 A
   Non repetitive surge peak on-state current (I_TSM): 350 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -60..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 3.8 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.45 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.75 V
   Triggering gate current (I_GT): 60 mA
   Holding current (I_H): 80 mA

Package: TO‑208AA

Т122-20-4 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

Т122-20-4 Datasheet

Page #1

Page #2

Description

ÒÈÐÈÑÒÎÐÛ Ò122-20, Ò122-25, Ò122-32 Êîíñòðóêöèÿ òèðèñòîðîâ m1, m2 - êîíòðîëüíûå òî÷êè èçìåðåíèÿ èìïóëüñíîãî íàïðÿæåíèÿ â îòêðûòîì ñîñòîÿíèè , m1 - â îäíîé èç äâóõ òî÷åê ; Lmin= 1,7 ìì - äëèíà ïóòè äëÿ òîêà óòå÷êè ìåæäó âûâîäîì àíîäà è âûâîäîì óïðàâëÿþùåãî ýëåêòðîäà. Ìàññà òèðèñòîðà íå á�

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. Т122-20-4 Datasheet