All Transistors. SCR. Т122-32-12 Datasheet

 

Т122-32-12 SCR DATASHEET

Т122-32-12 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1400 V
   Maximum average on-state current (IT(AVR)): 200 A
   Maximum RMS on-state current (IT(RMS)): 315 A
   Non repetitive surge peak on-state current (ITSM): 4400 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 0.81 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.08 K/W
   Triggering gate voltage (VGT): 3.5 V
   Peak on-state voltage drop (VTM): 1.9 V
   Triggering gate current (IGT): 200 mA
   Holding current (IH): 300 mA

Package: TO‑200AB

 

Т122-32-12 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т122-32-12 Datasheet

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Т122-32-12
 datasheet

Page #2

Т122-32-12
 datasheet #2

Description

ÒÈÐÈÑÒÎÐÛ Ò122-20, Ò122-25, Ò122-32 Êîíñòðóêöèÿ òèðèñòîðîâ m1, m2 - êîíòðîëüíûå òî÷êè èçìåðåíèÿ èìïóëüñíîãî íàïðÿæåíèÿ â îòêðûòîì ñîñòîÿíèè , m1 - â îäíîé èç äâóõ òî÷åê ; Lmin= 1,7 ìì - äëèíà ïóòè äëÿ òîêà óòå÷êè ìåæäó âûâîäîì àíîäà è âûâîäîì óïðàâëÿþùåãî ýëåêòðîäà. Ìàññà òèðèñòîðà íå á

 
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