Т122-32-4 SCR DATASHEET
Т122-32-4 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 200 A
Maximum RMS on-state current (IT(RMS)): 315 A
Non repetitive surge peak on-state current (ITSM): 4400 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 0.81 K/W
Junction to case thermal resistance (RTH(j-c)): 0.08 K/W
Triggering gate voltage (VGT): 3.5 V
Peak on-state voltage drop (VTM): 1.9 V
Triggering gate current (IGT): 200 mA
Holding current (IH): 300 mA
Package: TO‑200AB
Т122-32-4 Datasheet
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Description
ÒÈÐÈÑÒÎÐÛ Ò122-20, Ò122-25, Ò122-32 Êîíñòðóêöèÿ òèðèñòîðîâ m1, m2 - êîíòðîëüíûå òî÷êè èçìåðåíèÿ èìïóëüñíîãî íàïðÿæåíèÿ â îòêðûòîì ñîñòîÿíèè , m1 - â îäíîé èç äâóõ òî÷åê ; Lmin= 1,7 ìì - äëèíà ïóòè äëÿ òîêà óòå÷êè ìåæäó âûâîäîì àíîäà è âûâîäîì óïðàâëÿþùåãî ýëåêòðîäà. Ìàññà òèðèñòîðà íå á
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