Т123-200-9 SCR DATASHEET

Т123-200-9 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 320 A
   Maximum RMS on-state current (I_T(RMS)): 500 A
   Non repetitive surge peak on-state current (I_TSM): 6000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -60..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 0.8 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.07 K/W
   Triggering gate voltage (V_GT): 3.5 V
   Peak on-state voltage drop (V_TM): 1.75 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 300 mA

Package: TO‑200AB

Т123-200-9 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

Т123-200-9 Datasheet

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Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò123-200, T123-250, T123-320 Êîíñòðóêöèÿ òèðèñòîðîâ Ò123-200, T123-250, T123-320 D1 0,02 В 0,02 +0,2 2отв. O 3,5 х hmin Вывод анода В вариант D1 Lmax (15±10)° Dmax Размеры, мм Тип Масса, г, Усилие тиристора Dm D1 A L1min L2min Lmax b1 х S b2 х S hmin не более сжатия, Н ax Т123-200 42 19

LIST

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. Т123-200-9 Datasheet