Т123-320-10 SCR DATASHEET

Т123-320-10 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum average on-state current (I_T(AVR)): 500 A
   Non repetitive surge peak on-state current (I_TSM): 10000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 600 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.04 K/W
   Peak on-state voltage drop (V_TM): 1.5 V

Т123-320-10 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

Т123-320-10 Datasheet

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Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò123-200, T123-250, T123-320 Êîíñòðóêöèÿ òèðèñòîðîâ Ò123-200, T123-250, T123-320 D1 0,02 В 0,02 +0,2 2отв. O 3,5 х hmin Вывод анода В вариант D1 Lmax (15±10)° Dmax Размеры, мм Тип Масса, г, Усилие тиристора Dm D1 A L1min L2min Lmax b1 х S b2 х S hmin не более сжатия, Н ax Т123-200 42 19

LIST

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All Transistors. SCR. Т123-320-10 Datasheet