All Transistors. SCR. Т123-320-11 Datasheet

 

Т123-320-11 SCR DATASHEET

Т123-320-11 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum average on-state current (IT(AVR)): 630 A
   Non repetitive surge peak on-state current (ITSM): 12000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 600 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..150 °C
   Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
   Peak on-state voltage drop (VTM): 1.45 V

 

Т123-320-11 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т123-320-11 Datasheet

Page #1

Т123-320-11
 datasheet

Page #2

Т123-320-11
 datasheet #2

Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò123-200, T123-250, T123-320 Êîíñòðóêöèÿ òèðèñòîðîâ Ò123-200, T123-250, T123-320 D1 0,02 В 0,02 +0,2 2отв. O 3,5 х hmin Вывод анода В вариант D1 Lmax (15±10)° Dmax Размеры, мм Тип Масса, г, Усилие тиристора Dm D1 A L1min L2min Lmax b1 х S b2 х S hmin не более сжатия, Н ax Т123-200 42 19

 
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