Т153-800-12 SCR DATASHEET

Т153-800-12 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum average on-state current (I_T(AVR)): 100 A
   Maximum RMS on-state current (I_T(RMS)): 157 A
   Non repetitive surge peak on-state current (I_TSM): 2200 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 3.73 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.3 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.45 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 120 mA

Т153-800-12 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

Т153-800-12 Datasheet

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Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò153-630, T153-800 Êîíñòðóêöèÿ òèðèñòîðîâ Ò153-630, Ò153-800 В 50±1 В В 50±1 вариант 82max 75max 3.5 +0.2х2.3min 2отв. Вывод управляющего электрода 15°±10° Дополнительный вывод катода Ðазмеðы, мм Маññа, г, Уñèлèе ñжаòèÿ, Н L1min L2min íе бîлее 15

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. Т153-800-12 Datasheet