Т153-800-16 SCR DATASHEET
Т153-800-16 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 100 A
Maximum RMS on-state current (IT(RMS)): 157 A
Non repetitive surge peak on-state current (ITSM): 2200 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 3.73 K/W
Junction to case thermal resistance (RTH(j-c)): 0.3 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.45 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 120 mA
Т153-800-16 Datasheet
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Description
Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò153-630, T153-800 Êîíñòðóêöèÿ òèðèñòîðîâ Ò153-630, Ò153-800 В 50±1 В В 50±1 вариант 82max 75max 3.5 +0.2х2.3min 2отв. Вывод управляющего электрода 15°±10° Дополнительный вывод катода Ðазмеðы, мм Маññа, г, Уñèлèе ñжаòèÿ, Н L1min L2min íе бîлее 15
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |