All Transistors. SCR. Т165-100-11 Datasheet

 

Т165-100-11 SCR DATASHEET

Т165-100-11 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1100 V
   Maximum average on-state current (IT(AVR)): 50 A
   Maximum RMS on-state current (IT(RMS)): 79 A
   Non repetitive surge peak on-state current (ITSM): 1100 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 4.03 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.6 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 1.75 V
   Triggering gate current (IGT): 150 mA
   Holding current (IH): 120 mA

 

Т165-100-11 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т165-100-11 Datasheet

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Т165-100-11
 datasheet

Page #2

Т165-100-11
 datasheet #2

Description

ÒÈÐÈÑÒÎÐÛ Ò165-50, Ò165-63, Ò165-80, Ò165-100 Îáùèå ñâåäåíèÿ Òèðèñòîðû Ò165 âûïóñêàþò íà òîêè 50, 63, 80 è 100 À íàïðÿæåíèåì îò 200 äî 1600  â ïëàñòìàññîâîì êîðïóñå ñ áåñïîòåíöèàëüíûì îñíîâàíèåì ôëàíöåâîãî èñïîëíåíèÿ. Òèðèñòîðû ïðåäíàçíà÷åíû äëÿ ðàáîòû â ñèëîâûõ öåïÿõ ïîñòîÿííîãî è ïåðåìåí

 
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