Т165-63-11 SCR DATASHEET
Т165-63-11 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 80 A
Maximum RMS on-state current (IT(RMS)): 126 A
Non repetitive surge peak on-state current (ITSM): 1700 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 3.84 K/W
Junction to case thermal resistance (RTH(j-c)): 0.41 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 120 mA
Т165-63-11 Datasheet
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Description
ÒÈÐÈÑÒÎÐÛ Ò165-50, Ò165-63, Ò165-80, Ò165-100 Îáùèå ñâåäåíèÿ Òèðèñòîðû Ò165 âûïóñêàþò íà òîêè 50, 63, 80 è 100 À íàïðÿæåíèåì îò 200 äî 1600  â ïëàñòìàññîâîì êîðïóñå ñ áåñïîòåíöèàëüíûì îñíîâàíèåì ôëàíöåâîãî èñïîëíåíèÿ. Òèðèñòîðû ïðåäíàçíà÷åíû äëÿ ðàáîòû â ñèëîâûõ öåïÿõ ïîñòîÿííîãî è ïåðåìåí
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |