Т233-400-12 SCR DATASHEET
Т233-400-12 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 500 A
Maximum RMS on-state current (IT(RMS)): 785 A
Non repetitive surge peak on-state current (ITSM): 9900 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 0.56 K/W
Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 200 mA
Holding current (IH): 300 mA
Т233-400-12 Datasheet
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Description
Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò233-320, T233-400, T233-500 Êîíñòðóêöèÿ òèðèñòîðîâ Ò233-320, T233-400, T233-500 В 32±1 В В 32±1 вариант 63max 54max +0.2 3.5 х1.3min 2отв. Вывод управляющего электрода 15°±10° Дополнительный вывод катода L1 - расстояние по воздуху между анодом и управл
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