All Transistors. SCR. Т243-400-22 Datasheet

 

Т243-400-22 SCR DATASHEET

Т243-400-22 ELECTRICAL SPECIFICATIONS

 

Type: SCR

Maximum repetitive peak and off-state voltage (VDRM): 2200 V

Maximum average on-state current (IT(AVR)): 400 A

Maximum RMS on-state current (IT(RMS)): 630 A

Non repetitive surge peak on-state current (ITSM): 9900 A

Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs

Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs

Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C

Junction to ambient thermal resistance (RTH(j-a)): 0.54 K/W

Junction to case thermal resistance (RTH(j-c)): 0.03 K/W

Triggering gate voltage (VGT): 3 V

Peak on-state voltage drop (VTM): 2.15 V

Triggering gate current (IGT): 250 mA

Holding current (IH): 300 mA

 

Т243-400-22 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

 

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Т243-400-22 Datasheet

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Т243-400-22
 datasheet

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Т243-400-22
 datasheet #2

Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò243-400, T243-500, T243-630, T243-800 В 38±1 В В 38±1 вариант 70max 60max +0.2 3.5 х1.3min 2отв. Вывод управляющего электрода 15°±10° Дополнительный вывод катода Ðазмеры, мм Масса, г, Усилие сжатия, Н L1min L2min не более 10,3 21,8 300 15000±1000 L1 - расстоян

 
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