Т243-500-32 SCR Spec
Т243-500-32 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 900 V
Maximum average on-state current (IT(AVR)): 630 A
Maximum RMS on-state current (IT(RMS)): 990 A
Non repetitive surge peak on-state current (ITSM): 14300 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 0.54 K/W
Junction to case thermal resistance (RTH(j-c)): 0.03 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.75 V
Triggering gate current (IGT): 250 mA
Holding current (IH): 300 mA
Т243-500-32 Spec
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Description
Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò243-400, T243-500, T243-630, T243-800 В 38±1 В В 38±1 вариант 70max 60max +0.2 3.5 х1.3min 2отв. Вывод управляющего электрода 15°±10° Дополнительный вывод катода Ðазмеры, мм Масса, г, Усилие сжатия, Н L1min L2min не более 10,3 21,8 300 15000±1000 L1 - расстоян


