All Transistors. SCR. Т243-630-6 Datasheet

 

Т243-630-6 SCR DATASHEET

Т243-630-6 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1800 V
   Maximum average on-state current (IT(AVR)): 1000 A
   Maximum RMS on-state current (IT(RMS)): 2270 A
   Non repetitive surge peak on-state current (ITSM): 24500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
   Peak on-state voltage drop (VTM): 1.8 V

 

Т243-630-6 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т243-630-6 Datasheet

Page #1

Т243-630-6
 datasheet

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Т243-630-6
 datasheet #2

Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò243-400, T243-500, T243-630, T243-800 В 38±1 В В 38±1 вариант 70max 60max +0.2 3.5 х1.3min 2отв. Вывод управляющего электрода 15°±10° Дополнительный вывод катода Ðазмеры, мм Масса, г, Усилие сжатия, Н L1min L2min не более 10,3 21,8 300 15000±1000 L1 - расстоян

 
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