Т253-2000 SCR Spec
Т253-2000 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 2800 V
Maximum average on-state current (IT(AVR)): 1600 A
Maximum RMS on-state current (IT(RMS)): 2512 A
Non repetitive surge peak on-state current (ITSM): 34000 A
Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 0.21 K/W
Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 2.1 V
Triggering gate current (IGT): 300 mA
Holding current (IH): 300 mA
Т253-2000 Spec
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Description
Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò153-1600, T153-2000 Ò253-1600, T253-2000 Êîíñòðóêöèÿ òèðèñòîðîâ Ò153-1600, T153-2000 В 50±1 В 50±1 В L2min вариант 82max 75max +0.2 3.5 х1.3min 2отв. Вывод управляющего электрода 15°±10° Дополнительный вывод катода Ðазмеðы, мм Маññа, г, Уñèлèе ñжаòèÿ, Н L


