All Transistors. SCR. Т253-2000 Datasheet

 

Т253-2000 SCR DATASHEET

Т253-2000 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 2800 V
   Maximum average on-state current (IT(AVR)): 1600 A
   Maximum RMS on-state current (IT(RMS)): 2512 A
   Non repetitive surge peak on-state current (ITSM): 34000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 0.21 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 2.1 V
   Triggering gate current (IGT): 300 mA
   Holding current (IH): 300 mA

 

Т253-2000 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т253-2000 Datasheet

Page #1

Т253-2000
 datasheet

Page #2

Т253-2000
 datasheet #2

Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò153-1600, T153-2000 Ò253-1600, T253-2000 Êîíñòðóêöèÿ òèðèñòîðîâ Ò153-1600, T153-2000 В 50±1 В 50±1 В L2min вариант 82max 75max +0.2 3.5 х1.3min 2отв. Вывод управляющего электрода 15°±10° Дополнительный вывод катода Ðазмеðы, мм Маññа, г, Уñèлèе ñжаòèÿ, Н L

 
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