All Transistors. SCR. Т263-1000 Datasheet

 

Т263-1000 SCR DATASHEET

Т263-1000 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1200 V
   Maximum average on-state current (IT(AVR)): 2000 A
   Maximum RMS on-state current (IT(RMS)): 3140 A
   Non repetitive surge peak on-state current (ITSM): 49500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 0.21 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 2.05 V
   Triggering gate current (IGT): 300 mA
   Holding current (IH): 300 mA

 

Т263-1000 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т263-1000 Datasheet

Page #1

Т263-1000
 datasheet

Page #2

Т263-1000
 datasheet #2

Description

PROTON-ELECTROTEX RUSSIA Phase Control Thyristor High power cycling capability Low on-state and switching losses Type Т263-1000-52 Designed for traction and industrial applications Mean on-state current ITAV 1000 А Repetitive peak off-state voltage VDRM 4600 ¸ 5200 V Repetitive peak reverse voltage VRRM Turn-off time tq 800 ms VDRM, VRRM, V 4600 4800 5000 5200 Voltage code 46 48 50 52 Tj, °C – 60 ¸ 125 MAXIMUM ALLOWABLE RATINGS Symbols and parameters Units Values Test c

 
Back to Top