Т263-1000 SCR Spec

Т263-1000 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 2000 A
   Maximum RMS on-state current (I_T(RMS)): 3140 A
   Non repetitive surge peak on-state current (I_TSM): 49500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -60..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 0.21 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.01 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 2.05 V
   Triggering gate current (I_GT): 300 mA
   Holding current (I_H): 300 mA

 

Т263-1000 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
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Т263-1000 Spec

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Description

PROTON-ELECTROTEX RUSSIA Phase Control Thyristor High power cycling capability Low on-state and switching losses Type Т263-1000-52 Designed for traction and industrial applications Mean on-state current ITAV 1000 А Repetitive peak off-state voltage VDRM 4600 ¸ 5200 V Repetitive peak reverse voltage VRRM Turn-off time tq 800 ms VDRM, VRRM, V 4600 4800 5000 5200 Voltage code 46 48 50 52 Tj, °C – 60 ¸ 125 MAXIMUM ALLOWABLE RATINGS Symbols and parameters Units Values Test c