Т263-1000 SCR DATASHEET
Т263-1000 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 2000 A
Maximum RMS on-state current (IT(RMS)): 3140 A
Non repetitive surge peak on-state current (ITSM): 49500 A
Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 0.21 K/W
Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 2.05 V
Triggering gate current (IGT): 300 mA
Holding current (IH): 300 mA
Т263-1000 Datasheet
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Description
PROTON-ELECTROTEX RUSSIA Phase Control Thyristor High power cycling capability Low on-state and switching losses Type Т263-1000-52 Designed for traction and industrial applications Mean on-state current ITAV 1000 А Repetitive peak off-state voltage VDRM 4600 ¸ 5200 V Repetitive peak reverse voltage VRRM Turn-off time tq 800 ms VDRM, VRRM, V 4600 4800 5000 5200 Voltage code 46 48 50 52 Tj, °C – 60 ¸ 125 MAXIMUM ALLOWABLE RATINGS Symbols and parameters Units Values Test c
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |