All Transistors. SCR. Т271-250 Datasheet

 

Т271-250 SCR DATASHEET

Т271-250 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 2000 A
   Maximum RMS on-state current (IT(RMS)): 3140 A
   Non repetitive surge peak on-state current (ITSM): 49500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 0.21 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 2.05 V
   Triggering gate current (IGT): 300 mA
   Holding current (IH): 300 mA

 

Т271-250 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т271-250 Datasheet

Page #1

Т271-250
 datasheet

Page #2

Т271-250
 datasheet #2

Description

1 1234356789A42349AB1 1 1 1 1 1 1 123456789AB4BC2749 1 7 1 1 71 !7 71 1" !7 71 7 11 ABD9EF F 9 # $ 1" 1 % 7 & 1 7 7 9 1 1 1 1 1 1 1 ' 7" 1 1 1 1 12B31 1 9 8 77 1 71 7 7181 ()*+1 1 1 433, 331-1 8 77 1 71 $ 71 (**+1 7 71 - 7 18 !7 1 1 142B1 1 . ()*+/1(**+/1-1 4331 2331 331 0331 331 1 1 1 7 1 41 21 1 01 1 /11 1 503,4B31 9 9 9 9 9 9 9 A 9 9 A 9 "A1 $ !7 71 1 7 8 71 7 1 !7 71 8 1 7 7 1 A1 123245637898A3B9BCDE548FBF6BD 8 2B31 142411 21 B31

 
Back to Top