Т293-4000 SCR DATASHEET

Т293-4000 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 3600 V
   Maximum average on-state current (I_T(AVR)): 800 A
   Maximum RMS on-state current (I_T(RMS)): 1250 A
   Non repetitive surge peak on-state current (I_TSM): 17500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.02 K/W
   Peak on-state voltage drop (V_TM): 2.2 V

 

Т293-4000 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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Т293-4000 Datasheet

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Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò293-4000, T293-5000 Ò593-4000, T593-5000 100±1 100±1 160max 150max 3,5х3min 2отв. Вывод управляющего электрода Дополнительный вывод катода Ðазмеры, мм Масса, г, Òип тиристора Усилие сжатия, Н А L1min L2min не более Т293-4000, Т293-5000 26,0±2 12 30 2100 85000±5000 Т593-400