All Transistors. SCR. Т583-3200 Datasheet

 

Т583-3200 SCR DATASHEET

Т583-3200 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 3000 V
   Maximum average on-state current (IT(AVR)): 1600 A
   Maximum RMS on-state current (IT(RMS)): 2510 A
   Non repetitive surge peak on-state current (ITSM): 44000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 0.21 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 300 mA
   Holding current (IH): 300 mA

 

Т583-3200 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т583-3200 Datasheet

Page #1

Т583-3200
 datasheet

Page #2

Т583-3200
 datasheet #2

Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ T383-2500, T683-2500, T283-3200, T583-3200, Ò183-5000 Êîíñòðóêöèÿ òèðèñòîðîâ 105.5max 80±1 400±20 L2min 80±1 Вывод управляющего электрода 3,5х2min Дополнительный вывод 2отв. катода L1= 12 ìì - ðàññòîÿíèå ïî âîçäóõó ìåæäó àíîäîì è óïðàâëÿþùèì ýëåêòðîäîì; L2= 2

 
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