Т583-3200 SCR DATASHEET
Т583-3200 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 3000 V
Maximum average on-state current (IT(AVR)): 1600 A
Maximum RMS on-state current (IT(RMS)): 2510 A
Non repetitive surge peak on-state current (ITSM): 44000 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 0.21 K/W
Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 2 V
Triggering gate current (IGT): 300 mA
Holding current (IH): 300 mA
Т583-3200 Datasheet
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Description
Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ T383-2500, T683-2500, T283-3200, T583-3200, Ò183-5000 Êîíñòðóêöèÿ òèðèñòîðîâ 105.5max 80±1 400±20 L2min 80±1 Вывод управляющего электрода 3,5х2min Дополнительный вывод 2отв. катода L1= 12 ìì - ðàññòîÿíèå ïî âîçäóõó ìåæäó àíîäîì è óïðàâëÿþùèì ýëåêòðîäîì; L2= 2
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |