All Transistors. SCR. Т593-4000 Datasheet

 

Т593-4000 SCR DATASHEET

Т593-4000 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 3200 V
   Maximum average on-state current (IT(AVR)): 1600 A
   Maximum RMS on-state current (IT(RMS)): 2510 A
   Non repetitive surge peak on-state current (ITSM): 44000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1600 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 0.21 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 300 mA
   Holding current (IH): 300 mA

 

Т593-4000 Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т593-4000 Datasheet

Page #1

Т593-4000
 datasheet

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Т593-4000
 datasheet #2

Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò293-4000, T293-5000 Ò593-4000, T593-5000 100±1 100±1 160max 150max 3,5х3min 2отв. Вывод управляющего электрода Дополнительный вывод катода Ðазмеры, мм Масса, г, Òип тиристора Усилие сжатия, Н А L1min L2min не более Т293-4000, Т293-5000 26,0±2 12 30 2100 85000±5000 Т593-400

 
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