Т663-1600-32 SCR DATASHEET

Т663-1600-32 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1800 V
   Maximum average on-state current (I_T(AVR)): 2000 A
   Maximum RMS on-state current (I_T(RMS)): 3140 A
   Non repetitive surge peak on-state current (I_TSM): 49500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 800 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -60..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 0.21 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.01 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 2.05 V
   Triggering gate current (I_GT): 300 mA
   Holding current (I_H): 300 mA

 

Т663-1600-32 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
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Т663-1600-32 Datasheet

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Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò363-1600, Ò663-1600 Вывод анода Вывод управляющего электрода 3.5 х 3 min 2 отв. Дополнительный вывод катода Ðазмеры, мм Òип Масса, г, Усилие сжатия, Н тиристора А L1mi n L2min не более Т363-1600 26,0±2 10 21 950 42500±2500 Т663-1600 26,0+3 L1 - расстояние