All Transistors. SCR. Т693-3600 Datasheet

 

Т693-3600 SCR DATASHEET

Т693-3600 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1100 V
   Maximum average on-state current (IT(AVR)): 50 A
   Maximum RMS on-state current (IT(RMS)): 79 A
   Non repetitive surge peak on-state current (ITSM): 1300 A
   Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -50..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 2.57 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 2.3 V
   Triggering gate current (IGT): 150 mA
   Holding current (IH): 250 mA

 

Т693-3600 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Т693-3600 Datasheet

Page #1

Т693-3600
 datasheet

Page #2

Т693-3600
 datasheet #2

Description

Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò393-3200, Ò393-3600, T393-4000, Ò693-3200, Ò693-3600, T693-4000 Êîíñòðóêöèÿ òèðèñòîðîâ 100±1 100±1 160max 150max 3,5х3min 2отв. Вывод управляющего электрода Дополнительный вывод катода Размеры, мм Масса, г, Тип тиристора Усилие сжатия, Н А L1min L2min не боле

 
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