Т693-4000 SCR Spec
Т693-4000 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 50 A
Maximum RMS on-state current (IT(RMS)): 79 A
Non repetitive surge peak on-state current (ITSM): 1300 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -50..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 2.57 K/W
Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 2.3 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 250 mA
Т693-4000 Spec
Page #1
Page #2
Description
Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò393-3200, Ò393-3600, T393-4000, Ò693-3200, Ò693-3600, T693-4000 Êîíñòðóêöèÿ òèðèñòîðîâ 100±1 100±1 160max 150max 3,5х3min 2отв. Вывод управляющего электрода Дополнительный вывод катода Размеры, мм Масса, г, Тип тиристора Усилие сжатия, Н А L1min L2min не боле


