Т693-4000 SCR DATASHEET
Т693-4000 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 50 A
Maximum RMS on-state current (IT(RMS)): 79 A
Non repetitive surge peak on-state current (ITSM): 1300 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -50..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 2.57 K/W
Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 2.3 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 250 mA
Т693-4000 Datasheet
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Description
Òèðèñòîðû òàáëåòî÷íîé êîíñòðóêöèè ÒÈÐÈÑÒÎÐÛ Ò393-3200, Ò393-3600, T393-4000, Ò693-3200, Ò693-3600, T693-4000 Êîíñòðóêöèÿ òèðèñòîðîâ 100±1 100±1 160max 150max 3,5х3min 2отв. Вывод управляющего электрода Дополнительный вывод катода Размеры, мм Масса, г, Тип тиристора Усилие сжатия, Н А L1min L2min не боле
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |