Т853-500 SCR DATASHEET
Т853-500 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 50 A
Maximum RMS on-state current (IT(RMS)): 79 A
Non repetitive surge peak on-state current (ITSM): 1300 A
Critical repetitive rate of rise of on-state current (dI/dt): 160 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -50..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 2.57 K/W
Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 2.3 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 250 mA
Т853-500 Datasheet
Page #1
Page #2
Description
1 1 1 1 1234356789A42349AB1 1 1 1 1 1 1 12345678959ABCD 1 1 1 E2F2895FD 7 7 8 11 71 !7 71 1" !7 71# 7 11 E2 DE D 1 $ % 1" 1# & 7 ' 1# 7 7 1 1 1 1 1 1 7" 1# 1 1 1 B331 1 9 8 77 1 #( 71 # )7 7181 1 *+,-1 1 33111 B331 1 8 77 1 #( 71 % 71 # )7 71 *,,-1 7 18 !7 1 1 31 1 . *+,-/1*,,-/1 1 331 331 B3331 B2331 B 331 B 331 B 331 3331 2331 331 B331 0 1# 1 # )7 1 1 1 B31 B21 B 1 B 1 B 1 31 21 1 B1 /11 1 5 311242B1 1 D D D D 1 D E D 1 1 D E D "A1 %
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |