03906GPF SCR DATASHEET

03906GPF ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 10 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 40 A
   Maximum RMS on-state current (I_T(RMS)): 63 A
   Non repetitive surge peak on-state current (I_TSM): 1000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 400 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -65..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.35 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.8 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 500 mA

Package: TO‑208AC

 

03906GPF Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

03906GPF Datasheet

Page #1

Page #2

Description

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com SILICON CONTROLLED RECTIFIER / INVERTER • dv / dt – 200 V / usec • Blocking voltages up to 600V • 1000 Amperes surge current • Primarily for forced commutated • Low forward on-state voltage applications DEVICES LEVELS 03902