1000PT12C0 SCR DATASHEET

1000PT12C0 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 2 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 1000 A
   Maximum RMS on-state current (I_T(RMS)): 2000 A
   Non repetitive surge peak on-state current (I_TSM): 17800 A
   Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.04 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.62 V
   Triggering gate current (I_GT): 300 mA
   Holding current (I_H): 600 mA

 

1000PT12C0 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

1000PT12C0 Datasheet

Page #1

Page #2

Description

RoHS RoHS SEMICONDUCTOR RoHS 1000PT Series RoHS SEMICONDUCTOR Fig. 1 Fig. 2 Peak on-state voltage Vs. Peak on-state Current Max. Junction to heatsink thermal impedance Vs. Time 3 0.03 2.5 0.02 2 Tj = 125 C 1.5 0.01 1 0.5 0 100 1000 10000 0.001 0.01 0.1 1 10 Instantaneous on-state current , A Time , S Fig. 3 Fig. 4 Max. Power Dissipation Vs. Mean on-state Current Max. heatsink Temperature Vs. Mean on-state Current 2500 140 120 180 0 180 0 2000 180 120 100