100NT-120 SCR DATASHEET

100NT-120 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 100 A
   Maximum RMS on-state current (I_T(RMS)): 157 A
   Non repetitive surge peak on-state current (I_TSM): 2020 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -60..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.36 K/W
   Triggering gate voltage (V_GT): 1.9 V
   Peak on-state voltage drop (V_TM): 1.39 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 150 mA

Package: TO‑209AC

 

100NT-120 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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100NT-120 Datasheet

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Description

100NT Naina Semiconductor emiconductor Ltd. Phase Control Thyristors Phase Control Thyristors (Stud Type), 100A Features • Improved glass passivation for high reliability glass passivation for high reliability • Exceptional stability at high temperatures Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance Electrical Ratings (T = 250C, unless otherwise noted) C, unless otherwise