100NT3 SCR-module Spec

100NT3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 300 V
   Maximum average on-state current (I_T(AVR)): 100 A
   Maximum RMS on-state current (I_T(RMS)): 157 A
   Non repetitive surge peak on-state current (I_TSM): 3300 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -30..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.3 K/W
   Holding current (I_H): 70 mA

 

100NT3 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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100NT3 Spec

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Description

100NT3 Naina Semiconductor emiconductor Ltd. Non Non-isolated Thyristor Module Features • Low voltage three-phase • High surge current of 2500A @ 60Hz • Easy construction • Non-isolated • Mounting base as common anode Voltage Ratings (TC = 25OC unless otherwise specified) unless otherwise specified) Parameter Symbol Values Units Maximum repetitive peak VRRM 300 V reverse voltage Maximum non-repetitive VRSM 360 V peak reverse voltage Maximum repet