All Transistors. SCR. 10RIA20M Datasheet

 

10RIA20M SCR DATASHEET

10RIA20M ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 8 W
   Maximum repetitive peak and off-state voltage (VDRM): 200 V
   Maximum average on-state current (IT(AVR)): 10 A
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 225 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 300 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1.85 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.75 V
   Triggering gate current (IGT): 60 mA
   Holding current (IH): 130 mA

Package: TO‑208AA

 

10RIA20M Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

10RIA20M Datasheet

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10RIA20M
 datasheet

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10RIA20M
 datasheet #2

Description

10RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 10 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM • RoHS compliant TO-208AA (TO-48) • Designed and qualified for industrial and consumer level TYPICAL APPLICATION

 
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