10RIA20M SCR DATASHEET
10RIA20M ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 8 W
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum average on-state current (IT(AVR)): 10 A
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 225 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 300 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
Junction to case thermal resistance (RTH(j-c)): 1.85 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.75 V
Triggering gate current (IGT): 60 mA
Holding current (IH): 130 mA
Package: TO‑208AA
10RIA20M Datasheet
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Description
10RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 10 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM • RoHS compliant TO-208AA (TO-48) • Designed and qualified for industrial and consumer level TYPICAL APPLICATION
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |