1150PT18C0 SCR Spec
1150PT18C0 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 2 W
Maximum repetitive peak and off-state voltage (VDRM): 1800 V
Maximum average on-state current (IT(AVR)): 1150 A
Maximum RMS on-state current (IT(RMS)): 2000 A
Non repetitive surge peak on-state current (ITSM): 19000 A
Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.62 V
Triggering gate current (IGT): 300 mA
Holding current (IH): 600 mA
1150PT18C0 Spec
Page #1
Page #2
Description
RoHS RoHS SEMICONDUCTOR RoHS 1150PT Series RoHS SEMICONDUCTOR www.nellsemi.com Page 2 of 2


