130NT3 SCR-module DATASHEET
130NT3 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 300 V
Maximum average on-state current (IT(AVR)): 130 A
Maximum RMS on-state current (IT(RMS)): 204 A
Non repetitive surge peak on-state current (ITSM): 3300 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -30..150 °C
Junction to case thermal resistance (RTH(j-c)): 0.25 K/W
Holding current (IH): 70 mA
130NT3 Datasheet
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Description
13 130NTD Naina Semiconductor emiconductor Ltd. Thyristor Thyristor – Diode Module Features • Improved glass passivation for high reliability Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Maximum Ratings (TA = 250C unless otherwise noted) C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = IF(AV) 130 A 850
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |