All Transistors. SCR. 130NT3 Datasheet

 

130NT3 SCR-module DATASHEET

130NT3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (PGM): 1 W
   Maximum repetitive peak and off-state voltage (VDRM): 300 V
   Maximum average on-state current (IT(AVR)): 130 A
   Maximum RMS on-state current (IT(RMS)): 204 A
   Non repetitive surge peak on-state current (ITSM): 3300 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -30..150 °C
   Junction to case thermal resistance (RTH(j-c)): 0.25 K/W
   Holding current (IH): 70 mA

 

130NT3 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

130NT3 Datasheet

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130NT3
 datasheet

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130NT3
 datasheet #2

Description

13 130NTD Naina Semiconductor emiconductor Ltd. Thyristor Thyristor – Diode Module Features • Improved glass passivation for high reliability Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Maximum Ratings (TA = 250C unless otherwise noted) C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = IF(AV) 130 A 850

 
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