160NTT-80 SCR-module DATASHEET

160NTT-80 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 160 A
   Maximum RMS on-state current (I_T(RMS)): 350 A
   Non repetitive surge peak on-state current (I_TSM): 5100 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -65..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.16 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 200 mA

 

160NTT-80 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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160NTT-80 Datasheet

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Description

160NTT Naina Semiconductor Ltd. Thyristor – Thyristor Module, 160A Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Maximum Ratings (TA = 250C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = IF(AV) 160 A 850C Maximum average RMS forward current IF(RMS) 350 A Maximum non-repetitive surge current IF