All Transistors. SCR. 16RIA10M Datasheet

 

16RIA10M SCR DATASHEET

16RIA10M ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 8 W
   Maximum repetitive peak and off-state voltage (VDRM): 100 V
   Maximum average on-state current (IT(AVR)): 16 A
   Maximum RMS on-state current (IT(RMS)): 35 A
   Non repetitive surge peak on-state current (ITSM): 340 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.86 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.75 V
   Triggering gate current (IGT): 60 mA
   Holding current (IH): 130 mA

Package: TO‑208AA

 

16RIA10M Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

16RIA10M Datasheet

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16RIA10M
 datasheet

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16RIA10M
 datasheet #2

Description

16RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 16 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM • RoHS compliant TO-208AA (TO-48) • Designed and qualified for industrial and consumer level TYPICAL APPLICATION

 
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