16T06A-CW Triac DATASHEET
16T06A-CW ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 16 A
Non repetitive surge peak on-state current (ITSM): 160 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 1.2 K/W
Triggering gate voltage (VGT): 1.3 V
Peak on-state voltage drop (VTM): 1.55 V
Triggering gate current (IGT): 25 mA
Holding current (IH): 25 mA
Package: TO‑220AB
16T06A-CW Datasheet
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Description
RoHS 16T Series RoHS SEMICONDUCTOR TRIACs, 16A Snubberless, Logic Level and Standard Features A2 ● Medium current Triac ● Low thermal resistance with clip bonding 1 2 ● Low thermal resistance insulation ceramic for 3 A1 A2 insulated 16T G ● High commutation (4Q) or very high TO-220AB (non-Insulated) TO-220AB (lnsulated) commutation (3Q) capability (16TxxA) (16TxxAI) ● RoHS compliant, UL certified (File NO:E320098) ● Insulated tab (16TxxAI series,
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |